Nature Communications (Jan 2020)
Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals
- Guanhua Yang,
- Yan Shao,
- Jiebin Niu,
- Xiaolei Ma,
- Congyan Lu,
- Wei Wei,
- Xichen Chuai,
- Jiawei Wang,
- Jingchen Cao,
- Hao Huang,
- Guangwei Xu,
- Xuewen Shi,
- Zhuoyu Ji,
- Nianduan Lu,
- Di Geng,
- Jing Qi,
- Yun Cao,
- Zhongliu Liu,
- Liwei Liu,
- Yuan Huang,
- Lei Liao,
- Weiqi Dang,
- Zhengwei Zhang,
- Yuan Liu,
- Xidong Duan,
- Jiezhi Chen,
- Zhiqiang Fan,
- Xiangwei Jiang,
- Yeliang Wang,
- Ling Li,
- Hong-Jun Gao,
- Xiangfeng Duan,
- Ming Liu
Affiliations
- Guanhua Yang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Yan Shao
- Institute of Physics, Chinese Academy of Sciences
- Jiebin Niu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Xiaolei Ma
- School of Information Science and Engineering, Shandong University
- Congyan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Wei Wei
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Xichen Chuai
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Jiawei Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Jingchen Cao
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Hao Huang
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University
- Guangwei Xu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Xuewen Shi
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Zhuoyu Ji
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Nianduan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Di Geng
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Jing Qi
- Institute of Physics, Chinese Academy of Sciences
- Yun Cao
- Institute of Physics, Chinese Academy of Sciences
- Zhongliu Liu
- Institute of Physics, Chinese Academy of Sciences
- Liwei Liu
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology
- Yuan Huang
- Institute of Physics, Chinese Academy of Sciences
- Lei Liao
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University
- Weiqi Dang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University
- Zhengwei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University
- Yuan Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University
- Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University
- Jiezhi Chen
- School of Information Science and Engineering, Shandong University
- Zhiqiang Fan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University
- Xiangwei Jiang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University
- Yeliang Wang
- Institute of Physics, Chinese Academy of Sciences
- Ling Li
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences
- Xiangfeng Duan
- Department of Chemistry and Biochemistry and California Nanosystems Institute, University of California
- Ming Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-020-14383-0
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 7
Abstract
Though metallic edge states in monolayer transition metal dichalcogenide have been observed before, how these states contribute to charge transport remains unclear. Here, the authors quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing a dominated non-linear edge transport at low temperature, indicating possible Luttinger liquid behavior.
