Broadband Optical Properties of Bi<sub>2</sub>Se<sub>3</sub>
Georgy A. Ermolaev,
Ivan S. Vyslanko,
Andrey P. Tselin,
Marwa A. El-Sayed,
Mikhail K. Tatmyshevskiy,
Aleksandr S. Slavich,
Dmitry I. Yakubovsky,
Mikhail S. Mironov,
Arslan B. Mazitov,
Amir Eghbali,
Daria A. Panova,
Roman I. Romanov,
Andrey M. Markeev,
Ivan A. Kruglov,
Sergey M. Novikov,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Valentyn S. Volkov
Affiliations
Georgy A. Ermolaev
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Ivan S. Vyslanko
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Andrey P. Tselin
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Marwa A. El-Sayed
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Mikhail K. Tatmyshevskiy
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Aleksandr S. Slavich
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Dmitry I. Yakubovsky
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Mikhail S. Mironov
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Arslan B. Mazitov
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Amir Eghbali
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Daria A. Panova
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Roman I. Romanov
Department of Solid State Physics and Nanosystems, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe Sh., Moscow 115409, Russia
Andrey M. Markeev
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Ivan A. Kruglov
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Sergey M. Novikov
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Andrey A. Vyshnevyy
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Aleksey V. Arsenin
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Valentyn S. Volkov
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290–3300 nm) the refractive index n and the extinction coefficient k of Bi2Se3 are almost independent of synthesis technology, with only a ~10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS2, which has a ~60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi2Se3-based photonic devices.