Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities

Abstract

A new surface profilometry technique is proposed for profiling a wafer surface with both diffuse and specular reflective properties. Most moiré projection scanning techniques using triangulation principle work effectively on diffuse reflective surfaces, on which the reflected light beams are assumed to be well captured by optical sensors. In reality, this assumption is no longer valid when measuring a semiconductor wafer surface having both diffuse and specular reflectivities. To resolve the above problem, the proposed technique uses a dual optical sensing configuration by engaging two optical sensors at two different viewing angles, with one acquiring diffuse reflective light and the other detecting at the same time specular surface light for achieving simultaneous full-field surface profilometry. The deformed fringes measured by both sensors could be further transformed into a 3-D profile and merged seamlessly for full-field surface reconstruction. Several calibration targets and industrial parts were measured to evaluate the feasibility and accuracy of the developed technique. Experimental results showed that the technique can effectively detect diffuse and specular light with repeatability of one standard deviation below 0.3 µm on a specular surface and 2.0 µm on a diffuse wafer surface when the vertical measuring range reaches 1.0 mm. The present findings indicate that the proposed technique is effective for 3-D microscale surface profilometry in in-situ semiconductor automated optical inspection (AOI).

Keywords

• semiconductor
• surface profilometry
• moiré projection
• 3-D measurement
• automated optical inspection (AOI)