Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

Abstract

The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.

Keywords

• silicon
• implantation
• semiconductor
• nanosize
• surface
• silicide
• single crystal
• ion
• dose