Nature Communications (Oct 2017)

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

  • Xiao-Xi Li,
  • Zhi-Qiang Fan,
  • Pei-Zhi Liu,
  • Mao-Lin Chen,
  • Xin Liu,
  • Chuan-Kun Jia,
  • Dong-Ming Sun,
  • Xiang-Wei Jiang,
  • Zheng Han,
  • Vincent Bouchiat,
  • Jun-Jie Guo,
  • Jian-Hao Chen,
  • Zhi-Dong Zhang

DOI
https://doi.org/10.1038/s41467-017-01128-9
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 7

Abstract

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Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np diode behaviour.