Nature Communications (Oct 2017)
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
Abstract
Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np diode behaviour.