QUANTUM TUNNELING WITH DISSIPATION: AN APPLICATION TO TUNNEL TRANSPORT FOR SEMICONDUCTOR QUANTUM DOTS IN A COMBINED AFM / STM SYSTEM UNDER EXTERNAL ELECTRIC FIELD CONDITIONS (REVIEW). PART II.

Abstract

A brief review of articles developing the quantum tunneling with dissipation theory, as well as its applications to various problems in condensed matter physics, in particular, quantum mesoscopy of nanostructures, has been presented. A generalization of the instanton method to the case of impurity quasistationary states in quantum molecules described in the model of a double-well oscillatory potential has been also considered. The flexibility of the instanton method is demonstrated, which allows, in combination with the physics of low-dimensional systems, to obtain the solution of problems on the optical and transport properties of quantum molecules with impurity quasistationary states in an analytical form, as well as to take into account the effect of external fields. Part I of the article is presented in № 1 for 2017.

Keywords

• dissipative tunneling
• electric field
• quantum molecule