MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity

Guangying Wang; Yuting Li; Jeremy Kirch; Yizhou Han; Jiahao Chen; Samuel Marks; Swarnav Mukhopadhyay; Rui Liu; Cheng Liu; Paul G. Evans; Shubhra S. Pasayat

doi:10.3390/cryst13030446

Crystals (Mar 2023)

MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity

Guangying Wang,
Yuting Li,
Jeremy Kirch,
Yizhou Han,
Jiahao Chen,
Samuel Marks,
Swarnav Mukhopadhyay,
Rui Liu,
Cheng Liu,
Paul G. Evans,
Shubhra S. Pasayat

Affiliations

Guangying Wang: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Yuting Li: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Jeremy Kirch: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Yizhou Han: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Jiahao Chen: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Samuel Marks: Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Swarnav Mukhopadhyay: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Rui Liu: Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Cheng Liu: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Paul G. Evans: Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA
Shubhra S. Pasayat: Department of Electrical & Computer Engineering, University of Wisconsin−Madison, Madison, WI 53706, USA

DOI: https://doi.org/10.3390/cryst13030446
Journal volume & issue: Vol. 13, no. 3
p. 446

Abstract

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ScAlMgO4 (SAM) is a promising substrate material for group III-nitride semiconductors. SAM has a lower lattice mismatch with III-nitride materials compared to conventionally used sapphire (Al2O3) and silicon substrates. Bulk SAM substrate has the issues of high cost and lack of large area substrates. Utilizing solid-phase epitaxy to transform an amorphous SAM on a sapphire substrate into a crystalline form is a cost-efficient and scalable approach. Amorphous SAM layers were deposited on 0001-oriented Al2O3 by sputtering and crystallized by annealing at a temperature greater than 850 °C. Annealing under suboptimal annealing conditions results in a larger volume fraction of a competing spinel phase (MgAl2O4) exhibiting themselves as crystal facets on the subsequently grown InGaN layers during MOCVD growth. InGaN on SAM layers demonstrated both a higher intensity and emission redshift compared to the co-loaded InGaN on GaN on sapphire samples, providing a promising prospect for achieving efficient longer-wavelength emitters.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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