Cathodoluminescence studies of electron injection effects in p-type gallium oxide
Leonid Chernyak,
Alfons Schulte,
Jian-Sian Li,
Chao-Ching Chiang,
Fan Ren,
Stephen J. Pearton,
Corinne Sartel,
Vincent Sallet,
Zeyu Chi,
Yves Dumont,
Ekaterine Chikoidze,
Arie Ruzin
Affiliations
Leonid Chernyak
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Alfons Schulte
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Jian-Sian Li
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Chao-Ching Chiang
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Fan Ren
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Stephen J. Pearton
Material Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
Corinne Sartel
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines – CNRS, 45 Av. des Etats-Unis, 78035 Versailles, Cedex, France
Vincent Sallet
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines – CNRS, 45 Av. des Etats-Unis, 78035 Versailles, Cedex, France
Zeyu Chi
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines – CNRS, 45 Av. des Etats-Unis, 78035 Versailles, Cedex, France
Yves Dumont
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines – CNRS, 45 Av. des Etats-Unis, 78035 Versailles, Cedex, France
Ekaterine Chikoidze
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines – CNRS, 45 Av. des Etats-Unis, 78035 Versailles, Cedex, France
Arie Ruzin
School of Electrical Engineering, Tel Aviv University, Tel Aviv 69978, Israel
It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
