Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact
Hongxuan Guo,
Jiahao Yao,
Siyuan Chen,
Chong Qian,
Xiangyu Pan,
Kuibo Yin,
Hao Zhu,
Xu Gao,
Suidong Wang,
Litao Sun
Affiliations
Hongxuan Guo
School of Integrated Circuit, Southeast University, Nanjing 210096, China
Jiahao Yao
School of Integrated Circuit, Southeast University, Nanjing 210096, China
Siyuan Chen
School of Integrated Circuit, Southeast University, Nanjing 210096, China
Chong Qian
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Xiangyu Pan
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Kuibo Yin
School of Integrated Circuit, Southeast University, Nanjing 210096, China
Hao Zhu
School of Microelectronics, Fudan University, Shanghai 200433, China
Xu Gao
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Suidong Wang
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Litao Sun
School of Integrated Circuit, Southeast University, Nanjing 210096, China
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al’s and Au’s top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the Al2O3 film on the on/off window and voltage characteristics of the device were investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of AlN films, respectively. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and switching ratio.
