Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor

Hyun–Gyu Hwang; Jong–Un Woo; Tae–Ho Lee; Sung-Mean Park; Tae–Gon Lee; Woong-Hee Lee; Sahn Nahm

Materials & Design (Feb 2020)

Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor

Hyun–Gyu Hwang,
Jong–Un Woo,
Tae–Ho Lee,
Sung-Mean Park,
Tae–Gon Lee,
Woong-Hee Lee,
Sahn Nahm

Affiliations

Hyun–Gyu Hwang: Department of Nano Bio Information Technology, KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
Jong–Un Woo: Department of Nano Bio Information Technology, KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
Tae–Ho Lee: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
Sung-Mean Park: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
Tae–Gon Lee: Department of Nano Bio Information Technology, KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
Woong-Hee Lee: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
Sahn Nahm: Department of Nano Bio Information Technology, KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea; Corresponding author at: Department of Nano Bio Information Technology, KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Journal volume & issue: Vol. 187

Abstract

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An artificial synapse that can perform both learning and memory functions was realized using an amorphous Ta2O5 memristor. A Pt/Ta2O5/TiN memristor, with an amorphous Ta2O5 film grown at 100 °C, exhibited reliable bipolar switching properties at the various conductance states required for artificial synapse applications; in addition, it exhibited the transmission properties of physiological synapses. Various other synaptic properties were also obtained from the Ta2O5 memristor by modulating the input bias. The metaplasticity of a physiological synapse, which is a preliminary-spike-enhanced synaptic function, was also emulated in the Ta2O5 memristor via the metaplasticity of potentiation/depression and spike-timing-dependent plasticity. The synaptic plasticity and metaplasticity of the Ta2O5 memristor can be understood via the construction and destruction of oxygen vacancy filaments in the memristor. Keywords: Amorphous Ta2O5 films, Memristor, Neuromorphic device, Artificial synapse, Synaptic plasticity, Metaplasticity

Published in Materials & Design

ISSN: 0264-1275 (Print); 1873-4197 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/materials-and-design

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