School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Chunhui Ji
School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Luhua Cheng
School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Jiayue Han
School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Ming Yang
School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Xiongbang Wei
School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Yadong Jiang
School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Jun Wang
School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
We present a p-n-p monolayer graphene photodetector doped with titanium dioxide nanotubes for detecting light from visible to near-infrared (405 to 1310 nm) region. The built-in electric field separates the photo-induced electrons and holes to generate photocurrent without bias voltage, which allows the device to have meager power consumption. Moreover, the detector is very sensitive to the illumination area, and we analyze the reason using the energy band theory. The response time of the detector is about 30 ms. The horizontal p-n-p device is a suitable candidate in zero-bias optoelectronic applications.
