Boron quantum dots all-optical modulator based on efficient photothermal effect

Cong Wang; Qianyuan Chen; Hualong Chen; Jun Liu; Yufeng Song; Jie Liu; Delong Li; Yanqi Ge; Youning Gong; Yupeng Zhang; Han Zhang

doi:10.29026/oea.2021.200032

Opto-Electronic Advances (Jul 2021)

Boron quantum dots all-optical modulator based on efficient photothermal effect

Cong Wang,
Qianyuan Chen,
Hualong Chen,
Jun Liu,
Yufeng Song,
Jie Liu,
Delong Li,
Yanqi Ge,
Youning Gong,
Yupeng Zhang,
Han Zhang

Affiliations

Cong Wang: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Qianyuan Chen: School of Physics and Technology, and MOE Key Laboratory of Artificial Micro-and Nano-Structures, Wuhan University, Wuhan 430072, China
Hualong Chen: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Jun Liu: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Yufeng Song: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Jie Liu: Shandong Provincial Engineering and Technical Center of Light Manipulation Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
Delong Li: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Yanqi Ge: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Youning Gong: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Yupeng Zhang: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Han Zhang: Collaborative Innovation Center for Optoelectronic Science Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

DOI: https://doi.org/10.29026/oea.2021.200032
Journal volume & issue: Vol. 4, no. 7
pp. 1 – 10

Abstract

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All-optical devices without external electronic components have drawn extraordinary attentions in all-optical communication. In this work, boron quantum dots (BQDs) were synthesized by a facile liquid-phase exfoliation method. The as-prepared BQDs showed good structural homogeneity and crystallinity, broadband optical absorption as well as excellent photothermal properties. Femtosecond-resolved transient absorption further revealed the short carrier relaxation time of BQDs. Inspired by the outstanding photothermal properties and ultrafast carrier dynamic of BQDs, we fabricated BQDs-based all-optical modulator. The phase shift with a slope efficiency of 0.032 π/mW and response time of 0.97 ms can be achieved. The modulator was used in laser resonance cavity to achieve all-optical actively Q-switched laser operation with control repetition rate. This prototypical BQDs-based all-optical modulator shows a great potential to be applied in all-optical information processing and communication.

Published in Opto-Electronic Advances

ISSN: 2096-4579 (Print)
Publisher: Institue of Optics and Electronics, Chinese Academy of Sciences
Country of publisher: China
LCC subjects: Science: Physics: Optics. Light
Website: http://www.oejournal.org/oea

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