Change Of Nano Material Electrical Characteristics For Medical System Applications

Abstract

Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, People’s Republic of China; 3Department of Chemical Engineering, Northeastern University, Boston, MA, USACorrespondence: Thomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel [phone]Email [email protected] DaiNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel [phone]Email [email protected]: Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.Keywords: electrical properties, ntype semiconductor, ptype semiconductor, currentvoltage, IV, capacitancevoltage, CV, sensors

Keywords

• electrical properties
• n-type semiconductor
• p-type
• xps
• current-voltage (i-v)
• capacitance-voltage (c-v)
• sensors