Investigation on structural and opto-electronic properties of substitutional Sn doped WS2 by co-sputtering technique

Nabeel H. Alharthi; Saud M. Almotairy; Hamad F. Alharbi; M. Shahinuzzaman; Monis Luqman; K. Sobayel

Journal of Materials Research and Technology (Nov 2021)

Investigation on structural and opto-electronic properties of substitutional Sn doped WS2 by co-sputtering technique

Nabeel H. Alharthi,
Saud M. Almotairy,
Hamad F. Alharbi,
M. Shahinuzzaman,
Monis Luqman,
K. Sobayel

Affiliations

Nabeel H. Alharthi: Mechanical Engineering Department, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia; Centre of Excellence for Research in Engineering Materials, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia; Corresponding author.
Saud M. Almotairy: Centre of Excellence for Research in Engineering Materials, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia
Hamad F. Alharbi: Mechanical Engineering Department, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia; Centre of Excellence for Research in Engineering Materials, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia
M. Shahinuzzaman: Mechanical Engineering Department, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia; Centre of Excellence for Research in Engineering Materials, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia; Solar Energy Research Institute, The National University of Malaysia, 43600 Bangi, Malaysia; Department of Sustainable Energy, Faculty of Environmental Management, Prince of Songkla University, 90110 Songkhla, Thailand; Department of Chemical Sciences, Faculty of Science and Technology, The National University of Malaysia, Malaysia
Monis Luqman: Mechanical Engineering Department, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia; Centre of Excellence for Research in Engineering Materials, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia
K. Sobayel: Solar Energy Research Institute, The National University of Malaysia, 43600 Bangi, Malaysia; Department of Sustainable Energy, Faculty of Environmental Management, Prince of Songkla University, 90110 Songkhla, Thailand

Journal volume & issue: Vol. 15
pp. 846 – 854

Abstract

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The doping of two-dimensional materials provides them with tunable physical properties and broadens their application. In this study, the doping of tungsten disulﬁde with metallic Sn atoms via a co-sputtering technique was demonstrated. In particular, WS2 was deposited by radio frequency (RF) magnetron sputtering, while Sn atoms deposited by DC sputtering become substitutional dopants. It was revealed that the metallic tungsten atom, and in some cases sulfur vacancies, in the WS2 atomic layer created by RF magnetron sputtering were partially filled/substituted by metallic Sn atoms. The Sn-doped WS2 layers exhibited n-type doping behavior with remarkable opto-electronic properties (bandgap 2.09 eV, mobility 7.84 cm2/V·s and resistivity 2.81 × 103 Ω-cm for 1 min Sn doping) suitable for photovoltaic applications. Overall, this technique facilitates better control of the dopant distribution than the traditional approach.

Published in Journal of Materials Research and Technology

ISSN: 2238-7854 (Print); 2214-0697 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Mining engineering. Metallurgy
Website: https://www.journals.elsevier.com/journal-of-materials-research-and-technology/

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