All‐Optic Logical Operations Based on the Visible‐Near Infrared Bipolar Optical Response

Abstract

Abstract The burgeoning need for extensive data processing has sparked enthusiasm for the development of a novel optical logic gate platform. In this study, junction field‐effect phototransistors based on molybdenum disulfide/Germanium (MoS2/Ge) heterojunctions are constructed as optical logic units. This device demonstrates a positive photoresponse that is attributed to the photoconductivity effect occurring upon irradiation with visible (Vis) light. Under the illumination of near‐infrared (NIR) optics with wavelengths within the communication band, the device shows a negative photoresponse, which is associated with the interlayer Coulomb interactions. The current state of the device can be effectively modulated as different logical states by precisely tuning the wavelength and power density of the optical. Within a 3 × 3 MoS2/Ge phototransistor array, five essentially all‐optical logic gates (“AND,” “OR,” “NAND,” “NOT,” and “NOR”) can be achieved in every signal unit. Furthermore, three complex all‐optical logical operations are demonstrated by integrating two MoS2/Ge phototransistors in series. Compared to electronic designs, these all‐optical logic devices offer a significant reduction in transistor number, with savings of 50–94% when implementing the above‐mentioned functions. These results present opportunities for the development of photonic chips with low power consumption, high fidelity, and large volumes.

Keywords

• all‐optic logical
• bipolar optical response
• reduction transistor number