Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1−x thin films
Ju-Young Yoon,
Yutaro Takeuchi,
Samik DuttaGupta,
Yuta Yamane,
Shun Kanai,
Jun’ichi Ieda,
Hideo Ohno,
Shunsuke Fukami
Affiliations
Ju-Young Yoon
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Yutaro Takeuchi
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Samik DuttaGupta
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Yuta Yamane
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Shun Kanai
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Jun’ichi Ieda
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Hideo Ohno
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Shunsuke Fukami
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
We investigate the relationship between structural parameters, magnetic ordering, and the anomalous Hall effect (AHE) of Mn3+xSn1−x (−0.42 ≤ x ≤ +0.23) thin films annealed at various temperatures Ta. The crystal structure changes with x and Ta, and at Ta ≥ 500 °C near the stoichiometric composition (−0.08 ≤ x ≤ +0.04), epitaxial single-phase D019-Mn3+xSn1−x(101̄0) is obtained. At room temperature, a larger AHE is obtained when the single-phase epitaxial Mn3Sn with the lattice constant closer to that of bulk is formed. The temperature dependence of the AHE shows different behaviors depending on Ta and can be explained by considering the variation of magnetic ordering. A close inspection into the temperature and composition dependence suggests a variation of magnetic phase transition temperature with composition and/or a possible correlation between the AHE and Fermi level position with respect to the Weyl points. Our comprehensive study on (101̄0)-oriented epitaxial Mn3Sn thin films would provide the basis for utilizing the unique functionalities of non-collinear antiferromagnetic materials.
