Methods and mechanisms of gettering of silicon structures in the production of integrated circuits

Abstract

Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance of the application of gettering in modern microelectronic technology. The existing methods of silicon wafers gettering and the mechanisms of their occurrence are considered.

Keywords

• silicon
• getter
• laser
• rapidly diffusing impurity
• gettering center
• dislocation
• stacking fault