ELECTROMAGNETIC COMPATIBILITY OF SEMICONDUCTOR STRUCTURES WITH A TWO-DIMENSIONAL ELECTRON LAYER

Abstract

The subject matter is the mechanisms of interaction of the flow of charged particles with the surface plasmons of a two-dimensional electron layer (2D) due to the action of external pulsed electromagnetic radiation (EMP). The aim is obtaining design relations that determine to what degree the instabilities of natural vibrations of a two-dimensional electronic layer of a semiconductor structure may influence the performance of semiconductor devices. The objectives are a model of occurrence of reversible failures of radio products arising from the transformation of energy of currents induced by external pulsed radiation to excite electrostatic oscillations of a two-dimensional electronic layer of semiconductor structures. The methods used are analytical methods for solving electrodynamics (Maxwell) equations and material equations in the framework of kinetic approach. The following results have been obtained: The mechanisms of interaction of the flow of charged particles with the natural electromagnetic vibrations of a two-dimensional electron gas occurring due to the presence of a potential barrier at the interface have been studied. Investigations of functioning of semiconductor components of radio products (structures with two-dimensional electron gas) under the influence of strong pulsed electromagnetic fields have been carried out. A kinetic equation describing the change in the number of electromagnetic oscillations of such a system has been obtained. The solution of the equation has been found, which allows determining the influence of the barrier on the instability increment of surface vibrations as well as the contributions of the transmitted and reflected components of the particle flux to the increment. Equations for the increment of instabilities allow us to determine the energy loss of the induced currents on the excitation of natural oscillations i.e. the emergence of a mode of oscillation generation, which is characterized by a change in the volt-ampere characteristics of radio devices. Conclusion. A comparative analysis of the instabilities of vibrations of structures with a two-dimensional electron gas has been carried out under conditions when the interaction of waves and particles is random and deterministic. It is shown that the differences in the expressions for increments are associated with a change in the size of the region of interaction of waves and particles. Differences in the influence of the potential barrier on the increment are established in cases where the interaction of surface plasmons and charged particles is determined or has the character of random collisions. The mechanisms of the influence of the boundary on the interaction of surface electromagnetic waves and electrons in the presence of a potential barrier are determined. Intrinsic electromagnetic oscillations of a two-dimensional electron layer are taken as research objects. The results obtained in the work can be used to assess the operability of electronic equipment in millimeter and submillimeter ranges under the influence of pulsed electromagnetic fields.

Keywords

• electromagnetic fields
• vibrations
• semiconductor
• kinetic instabilities
• potential barrier
• flow of charged particles