High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer

Abstract

We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD characterization of the graded AlGaAsSb layer sample. With the inserted graded layer between the cladding and waveguide layers, high-power, high-efficiency GaSb-based laser emitters and laser bars were confirmed. The linearly graded interface layer smooths the potential barrier peak between the cladding and waveguide layers, which resulted in a low turn-on voltage of 0.65 V and an ultra-low series resistance of 0.144 Ω. A maximum continuous-wave output power of 1.8 W was obtained with a high power conversion efficiency of 28% at 1.1 A and 12% at 8 A. A facet-coated laser bar was also fabricated with a record-high CW output power of 18 W. A high internal quantum efficiency of 83 was maintained at 40 °C, implying improved carrier injection efficiency, which benefits from the built-in electric field of the composition-graded AlGaAsSb layer.

Keywords

• GaSb-based diode lasers
• high power
• molecular beam epitaxy