Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Mengxing Wang; Wenlong Cai; Kaihua Cao; Jiaqi Zhou; Jerzy Wrona; Shouzhong Peng; Huaiwen Yang; Jiaqi Wei; Wang Kang; Youguang Zhang; Jürgen Langer; Berthold Ocker; Albert Fert; Weisheng Zhao

doi:10.1038/s41467-018-03140-z

Nature Communications (Feb 2018)

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Mengxing Wang,
Wenlong Cai,
Kaihua Cao,
Jiaqi Zhou,
Jerzy Wrona,
Shouzhong Peng,
Huaiwen Yang,
Jiaqi Wei,
Wang Kang,
Youguang Zhang,
Jürgen Langer,
Berthold Ocker,
Albert Fert,
Weisheng Zhao

Affiliations

Mengxing Wang: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Wenlong Cai: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Kaihua Cao: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Jiaqi Zhou: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Jerzy Wrona: Singulus Technologies
Shouzhong Peng: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Huaiwen Yang: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Jiaqi Wei: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Wang Kang: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Youguang Zhang: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Jürgen Langer: Singulus Technologies
Berthold Ocker: Singulus Technologies
Albert Fert: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University
Weisheng Zhao: Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University

DOI: https://doi.org/10.1038/s41467-018-03140-z
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 7

Abstract

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Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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