Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
Jie Gu,
Qingzhu Zhang,
Zhenhua Wu,
Jiaxin Yao,
Zhaohao Zhang,
Xiaohui Zhu,
Guilei Wang,
Junjie Li,
Yongkui Zhang,
Yuwei Cai,
Renren Xu,
Gaobo Xu,
Qiuxia Xu,
Huaxiang Yin,
Jun Luo,
Wenwu Wang,
Tianchun Ye
Affiliations
Jie Gu
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Qingzhu Zhang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Zhenhua Wu
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Jiaxin Yao
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Zhaohao Zhang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Xiaohui Zhu
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Guilei Wang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Junjie Li
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Yongkui Zhang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Yuwei Cai
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Renren Xu
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Gaobo Xu
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Qiuxia Xu
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Huaxiang Yin
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Jun Luo
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Wenwu Wang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
Tianchun Ye
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.
