A 2 μm Wavelength Band Low-Loss Spot Size Converter Based on Trident Structure on the SOI Platform
Zhutian Wang,
Chenxi Xu,
Zhiming Shi,
Nan Ye,
Hairun Guo,
Fufei Pang,
Yingxiong Song
Affiliations
Zhutian Wang
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200444, China
Chenxi Xu
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200444, China
Zhiming Shi
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200444, China
Nan Ye
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200444, China
Hairun Guo
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200444, China
Fufei Pang
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200444, China
Yingxiong Song
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200444, China
A 2 μm wavelength band spot size converter (SSC) based on a trident structure is proposed, which is coupled to a lensed fiber with a mode field diameter of 5 μm. The cross-section of the first segment of the tapered waveguide structure in the trident structure is designed as a right-angled trapezoidal shape, which can further improve the performance of the SSC. The coupling loss of the SSC is less than 0.9 dB in the wavelength range of 1.95~2.05 μm simulated by FDTD. According to the experimental results, the lowest coupling loss of the SSC is 1.425 dB/facet at 2 μm, which is close to the simulation result. The device is compatible with the CMOS process and can provide a good reference for the development of 2 μm wavelength band integrated photonics.
