Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Shuling Xiang
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Jiachang Bi
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Fugang Qi
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Peiyi Li
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Shunda Zhang
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Shaozhu Xiao
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Ruyi Zhang
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Zhiyang Wei
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Yanwei Cao
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Corresponding author.
Epitaxy of rare-earth nitride films are crucial for studying their physical properties and offer significant potential for applications in spintronics and optoelectronics. However, synthesizing single-crystalline LuN presents significant challenges, leading to a limited understanding of its properties. In this study, we successfully achieved the epitaxial growth of (001)-oriented LuN films on YAlO3 (110) substrates by reactive magnetron sputtering epitaxy. Electrical transport measurement at low temperatures reveals that the LuN film exhibits semiconducting behavior between 300 K and 2 K, with an activation energy of approximately 0.01 eV. Notably, negative magnetoresistance was observed below 12 K, which can result from the defects and magnetic impurities in LuN films. Our results uncover the electronic and magnetic properties of epitaxial LuN films.
