Nanomaterials (Oct 2023)

Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths

  • Yulia Kirichenko (Bobretsova),
  • Dmitriy Veselov,
  • Alexander Klimov,
  • Sergey Slipchenko,
  • Natalia Shuvalova,
  • Andrey Lyutetsky,
  • Nikita Pikhtin,
  • Alexander Marmalyuk,
  • Vladimir Svetogorov,
  • Yuriy Ryaboshtan,
  • Maksim Ladugin

DOI
https://doi.org/10.3390/nano13202746
Journal volume & issue
Vol. 13, no. 20
p. 2746

Abstract

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A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured, and their dependence on the stripe width is shown. The operating optical power increases from 1.4 W to 4.3 W; however, the lateral brightness decreases from 1.09 W/(mm*mrad) to 0.65 W/(mm*mrad) as the stripe width increases from 20 to 150 μm.

Keywords