Journal of Telecommunications and Information Technology (Dec 2000)

CVD growth of high speed SiGe HBTs using SiH4

  • Henry H. Radamson,
  • Jan Grahn,
  • Gunnar Landgren

DOI
https://doi.org/10.26636/jtit.2000.3-4.32
Journal volume & issue
no. 3-4

Abstract

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The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a~higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.

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