AIP Advances
(Jul 2018)
Surface morphology of GaN nucleation layer grown by MOCVD with different carrier gas
Xingliang Su,
Teng Ye,
Shen Wang,
Yujun Shi,
Leilei Fan,
Lei Liu,
Geng Zhang,
Xurong Shi,
Min Wei,
Haitao Zhou,
Hujun Jiao
Affiliations
Xingliang Su
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Teng Ye
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Shen Wang
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Yujun Shi
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Leilei Fan
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Lei Liu
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Geng Zhang
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Xurong Shi
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Min Wei
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Haitao Zhou
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
Hujun Jiao
School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
DOI
https://doi.org/10.1063/1.5033939
Journal volume & issue
Vol. 8,
no. 7
Abstract
Read online
GaN nucleation layers were grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) with different carrier gas. The morphology of nucleation layer which is crucial to GaN crystal quality was systematically studied using nitrogen and hydrogen as carrier gas. The GaN nucleation layer tends to form larger islands under H2 ambient, and forms higher density nucleation islands and thicker nucleation layer under N2 ambient.
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