Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters

Abstract

This work investigates the effect of the doping concentration of SiC power metal-oxide–semiconductor field-effect transistors (MOSFETs) under an unclamped inductive switching (UIS) condition. Switching circuits such as inverters and motor-drive circuits often face unexpected operating conditions; therefore, a UIS test is performed to assess the avalanche ruggedness of the device, and design parameters such as the doping concentration should be considered to improve the UIS characteristics. Technology computer-aided design circuit simulation results, such as the current flows during failure and electrical changes, were obtained by changing the doping concentration of each region in the SiC power MOSFET.

Keywords

• power MOSFET
• silicon carbide
• unclamped inductive switching
• avalanche ruggedness