Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions

Abstract

The concentration dependences of unit cell parameter a, width of diffraction reflections B, electrical conductivity s, the Seebeck coefficient S, the Hall coefficient RH, charge carrier mobility m, and thermoelectric power factor P = S2 ×s for the Pb1-xBixTe (x = 0¸0.05) alloys were obtained. A non-monotonic character of the concentration dependences of properties was detected and attributed to a change in the defect formation in the PbTe-BiTe system under increasing BiTe concentration.