Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)

Optimization of technological parameters And Verification of Electrical Characteristics OF THE 0.35 μm MOSFET

  • T. T. Tran,
  • V. R. Stempitsky,
  • S. A. Soroka

Journal volume & issue
Vol. 0, no. 3
pp. 83 – 89

Abstract

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The description of the original integrated approach to solving the problem of statistical analysis in microelectronic products design process from the design of the technological routine to the system design. Testing of this methodology is described by investigating the influence of process parameters on dispersion structural and electrical characteristics of 0.35 micron MOS transistor, and the characteristics of the analog and digital circuit solutions.

Keywords