Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process

Abstract

An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current spinning system to remove the amplifier and Hall Plate offset were designed and placed in the same chip. The results show a better sensitivity performance in the cross-shaped Hall Plate and a linear behavior of the sensor in the range of operation tested.

Keywords

• Hall Plate
• CMOS design
• Solid state magnetic field sensor.