Temperature-induced band shift in bulk γ-InSe by angle-resolved photoemission spectroscopy

Huanfeng Xu; Wei Wang; Yafei Zhao; Xiaoqian Zhang; Yue Feng; Jian Tu; Chenyi Gu; Yizhe Sun; Chang Liu; Yuefeng Nie; Ion C. Edmond Turcu; Yongbing Xu; Liang He

doi:10.1063/1.5032256

AIP Advances (May 2018)

Temperature-induced band shift in bulk γ-InSe by angle-resolved photoemission spectroscopy

Huanfeng Xu,
Wei Wang,
Yafei Zhao,
Xiaoqian Zhang,
Yue Feng,
Jian Tu,
Chenyi Gu,
Yizhe Sun,
Chang Liu,
Yuefeng Nie,
Ion C. Edmond Turcu,
Yongbing Xu,
Liang He

Affiliations

Huanfeng Xu: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Wei Wang: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yafei Zhao: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Xiaoqian Zhang: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yue Feng: Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China
Jian Tu: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Chenyi Gu: National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yizhe Sun: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Chang Liu: Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China
Yuefeng Nie: National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Ion C. Edmond Turcu: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yongbing Xu: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Liang He: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

DOI: https://doi.org/10.1063/1.5032256
Journal volume & issue: Vol. 8, no. 5
pp. 055123 – 055123-6

Abstract

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Indium selenide (InSe) has recently become popular research topics because of its unique layered crystal structure, direct band gap and high electron mobilities. In this work, we have acquired the electronic structure of bulk γ-InSe at various temperatures using angle-resolved photoemission spectroscopy (ARPES). We have also found that as the temperature decreases, the valence bands of γ-InSe exhibit a monotonic shift to lower binding energies. This band shift is attributed to the change of lattice parameters and has been validated by variable temperature X-ray diffraction measurements and theoretical calculations.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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