Atomic Layer Deposition for Preparing Isolated Co Sites on SiO₂ for Ethane Dehydrogenation Catalysis

Abstract

Unlike Co clusters, isolated Co atoms have been shown to be selective for catalytic dehydrogenation of ethane to ethylene; however, preparation of isolated Co sites requires special preparation procedures. Here, we demonstrate that Atomic Layer Deposition (ALD) of tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt(III) (Co(TMHD)3) on silica and other supports is effective in producing these isolated species. Silica-supported catalysts prepared with one ALD cycle showed ethylene selectivities greater than 96% at 923 K and were stable when CO2 was co-fed with the ethane. Co catalysts prepared by impregnation formed clusters that were significantly less active, selective, and stable. Rates and selectivities also decreased for catalysts with multiple ALD cycles. Isolated Co catalysts prepared on Al2O3 and MgAl2O4 showed reasonable selectivity for ethane dehydrogenation but were not as effective as their silica counterpart.

Keywords

• ethane dehydrogenation
• cobalt
• silica
• atomic layer deposition (ald)
• co/sio₂
• oxidative dehydrogenation
• single-site catalysts