Toward the use of CVD-grown MoS2 nanosheets as field-emission source

Geetanjali Deokar; Nitul S. Rajput; Junjie Li; Francis Leonard Deepak; Wei Ou-Yang; Nicolas Reckinger; Carla Bittencourt; Jean-Francois Colomer; Mustapha Jouiad

doi:10.3762/bjnano.9.160

Beilstein Journal of Nanotechnology (Jun 2018)

Toward the use of CVD-grown MoS2 nanosheets as field-emission source

Geetanjali Deokar,
Nitul S. Rajput,
Junjie Li,
Francis Leonard Deepak,
Wei Ou-Yang,
Nicolas Reckinger,
Carla Bittencourt,
Jean-Francois Colomer,
Mustapha Jouiad

Affiliations

Geetanjali Deokar: Department of Mechanical and Materials Engineering, Masdar Institute of Science and Technology, A part of Khalifa University of Science and Technology, 54224, Abu Dhabi, United Arab Emirates
Nitul S. Rajput: Department of Mechanical and Materials Engineering, Masdar Institute of Science and Technology, A part of Khalifa University of Science and Technology, 54224, Abu Dhabi, United Arab Emirates
Junjie Li: Department of Advanced Electron Microscopy, Imaging and Spectroscopy, International Iberian Nanotechnology Laboratory (INL), Avenida Mestre Jose Veiga, Braga 4715-330, Portugal
Francis Leonard Deepak: Department of Advanced Electron Microscopy, Imaging and Spectroscopy, International Iberian Nanotechnology Laboratory (INL), Avenida Mestre Jose Veiga, Braga 4715-330, Portugal
Wei Ou-Yang: Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062, China
Nicolas Reckinger: Research Group on Carbon Nanostructures (CARBONNAGe), University of Namur, 61 Rue de Bruxelles, 5000 Namur, Belgium
Carla Bittencourt: Chimie des Interactions Plasma-Surface (ChIPS), CIRMAP, Research Institute for Materials Science and Engineering, University of Mons, Mons, Belgium
Jean-Francois Colomer: Research Group on Carbon Nanostructures (CARBONNAGe), University of Namur, 61 Rue de Bruxelles, 5000 Namur, Belgium
Mustapha Jouiad: Department of Mechanical and Materials Engineering, Masdar Institute of Science and Technology, A part of Khalifa University of Science and Technology, 54224, Abu Dhabi, United Arab Emirates

DOI: https://doi.org/10.3762/bjnano.9.160
Journal volume & issue: Vol. 9, no. 1
pp. 1686 – 1694

Abstract

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Densely populated edge-terminated vertically aligned two-dimensional MoS2 nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO2 by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 µA/cm2 was measured. The low turn-on field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS2 with sharp and exposed edges. Our findings show that the fabricated MoS2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.

Published in Beilstein Journal of Nanotechnology

ISSN: 2190-4286 (Online)
Publisher: Beilstein-Institut
Country of publisher: Germany
LCC subjects: Technology: Chemical technology; Science: Physics
Website: http://www.beilstein-journals.org/bjnano/home/home.htm

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