A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs

Jinghao Zhao; Qiwen Zheng; Jiangwei Cui; Hang Zhou; Xiaowen Liang; Xuefeng Yu; Qi Guo

Results in Physics (Jun 2019)

A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs

Jinghao Zhao,
Qiwen Zheng,
Jiangwei Cui,
Hang Zhou,
Xiaowen Liang,
Xuefeng Yu,
Qi Guo

Affiliations

Jinghao Zhao: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 83001, China; University of Chinese Academy of Sciences, Beijing 100049, China
Qiwen Zheng: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 83001, China
Jiangwei Cui: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 83001, China
Hang Zhou: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 83001, China; University of Chinese Academy of Sciences, Beijing 100049, China
Xiaowen Liang: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 83001, China; University of Chinese Academy of Sciences, Beijing 100049, China
Xuefeng Yu: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 83001, China; Corresponding author at: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China.
Qi Guo: Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 83001, China

Journal volume & issue: Vol. 13

Abstract

Read online

The hot carrier injection (HCI) effect induced degradation is investigated for gamma ray irradiated PD I/O SOI PMOSFETs with T-shaped gate and H-shaped gate. Radiation enhanced effect on degradation during hot carrier stress is observed in two kinds of samples. And it is observed that radiation has more significant effect on T-gate devices than H-gate during stress time. Besides, the change on gate current degradation induced by irradiation is also worth noticing. Keywords: Hot carrier effect, PMOS, Total ionizing dose effect

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

About the journal