High Thermoelectric Performance of Cu-Doped PbSe-PbS System Enabled by High-Throughput Experimental Screening
Li You,
Zhili Li,
Quanying Ma,
Shiyang He,
Qidong Zhang,
Feng Wang,
Guoqiang Wu,
Qingyi Li,
Pengfei Luo,
Jiye Zhang,
Jun Luo
Affiliations
Li You
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Zhili Li
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Quanying Ma
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Shiyang He
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Qidong Zhang
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Feng Wang
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Guoqiang Wu
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Qingyi Li
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Pengfei Luo
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Jiye Zhang
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Jun Luo
School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China; Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai 200444, China
Recent advances in high-throughput (HTP) computational power and machine learning have led to great achievements in exploration of new thermoelectric materials. However, experimental discovery and optimization of thermoelectric materials have long relied on the traditional Edisonian trial and error approach. Herein, we demonstrate that ultrahigh thermoelectric performance in a Cu-doped PbSe-PbS system can be realized by HTP experimental screening and precise property modulation. Combining the HTP experimental technique with transport model analysis, an optimal Se/S ratio showing high thermoelectric performance has been efficiently screened out. Subsequently, based on the screened Se/S ratio, the doping content of Cu has been subtly adjusted to reach the optimum carrier concentration. As a result, an outstanding peak zT~1.6 is achieved at 873 K for a 1.8 at% Cu-doped PbSe0.6S0.4 sample, which is the superior value among the n-type Te-free lead chalcogenides. We anticipate that current work will stimulate large-scale unitization of the HTP experimental technique in the thermoelectric field, which can greatly accelerate the research and development of new high-performance thermoelectric materials.