>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer

Abstract

Abstract The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned very close to the p‐cladding, is reported. An anti‐reflection/high reflection coated laser with a stripe width of 100 μm exhibits a single‐facet output power over 25 W at a pumping current amplitude of 100 A.

Keywords

• Lasing action in semiconductors
• Design of specific laser systems
• Semiconductor lasers