Atomic electrostatic maps of 1D channels in 2D semiconductors using 4D scanning transmission electron microscopy

Shiang Fang; Yi Wen; Christopher S. Allen; Colin Ophus; Grace G. D. Han; Angus I. Kirkland; Efthimios Kaxiras; Jamie H. Warner

doi:10.1038/s41467-019-08904-9

Nature Communications (Mar 2019)

Atomic electrostatic maps of 1D channels in 2D semiconductors using 4D scanning transmission electron microscopy

Shiang Fang,
Yi Wen,
Christopher S. Allen,
Colin Ophus,
Grace G. D. Han,
Angus I. Kirkland,
Efthimios Kaxiras,
Jamie H. Warner

Affiliations

Shiang Fang: Department of Physics, Harvard University
Yi Wen: Department of Materials, University of Oxford
Christopher S. Allen: Department of Materials, University of Oxford
Colin Ophus: National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory
Grace G. D. Han: Department of Chemistry, Brandeis University
Angus I. Kirkland: Department of Materials, University of Oxford
Efthimios Kaxiras: Department of Physics, Harvard University
Jamie H. Warner: Department of Materials, University of Oxford

DOI: https://doi.org/10.1038/s41467-019-08904-9
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 9

Abstract

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Imaging electrostatic field around individual atoms or defective areas in monolayer 2D materials is crucial to understand their structural coordination. Here, the authors report local changes in specific atomic bonds and provide in-depth structural information of complex defective monolayer MoS2 and WS2 systems by 4D STEM.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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