Nanoscale Research Letters (Oct 2016)

Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

  • L. D’Ortenzi,
  • R. Monsù,
  • E. Cara,
  • M. Fretto,
  • S. Kara,
  • S. J. Rezvani,
  • L. Boarino

DOI
https://doi.org/10.1186/s11671-016-1689-x
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 6

Abstract

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Abstract Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

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