Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

Zhongliang Qiao; Xiang Li; Jia Xubrian Sia; Wanjun Wang; Hong Wang; Lin Li; Zaijin Li; Zhibin Zhao; Yi Qu; Xin Gao; Baoxue Bo; Chongyang Liu

doi:10.1109/ACCESS.2021.3051179

IEEE Access (Jan 2021)

Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

Zhongliang Qiao,
Xiang Li,
Jia Xubrian Sia,
Wanjun Wang,
Hong Wang,
Lin Li,
Zaijin Li,
Zhibin Zhao,
Yi Qu,
Xin Gao,
Baoxue Bo,
Chongyang Liu

Affiliations

Zhongliang Qiao: ORCiD; Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Xiang Li: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Jia Xubrian Sia: ORCiD; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Wanjun Wang: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Hong Wang: ORCiD; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Lin Li: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Zaijin Li: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Zhibin Zhao: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Yi Qu: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Xin Gao: National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
Baoxue Bo: National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
Chongyang Liu: ORCiD; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

DOI: https://doi.org/10.1109/ACCESS.2021.3051179
Journal volume & issue: Vol. 9
pp. 16608 – 16614

Abstract

Read online

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 μm is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (T0) of the laser and the influences of absorber bias voltage on T0 have been systematically investigated. From our findings, T0 shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

About the journal

Abstract

Keywords