Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Xiang Li
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Lin Li
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Zaijin Li
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Zhibin Zhao
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Yi Qu
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China
Xin Gao
National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
Baoxue Bo
National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 μm is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (T0) of the laser and the influences of absorber bias voltage on T0 have been systematically investigated. From our findings, T0 shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.
