Application of Magnetic Force Microscopy for Investigation of Epitaxial Ferro- and Antiferromagnetic Structures

Materials. 2017;10(10):1156 DOI 10.3390/ma10101156

 

Journal Homepage

Journal Title: Materials

ISSN: 1996-1944 (Print)

Publisher: MDPI AG

LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering | Technology: Engineering (General). Civil engineering (General) | Science: Natural history (General): Microscopy | Science: Physics: Descriptive and experimental mechanics

Country of publisher: Switzerland

Language of fulltext: English

Full-text formats available: PDF, HTML

 

AUTHORS

Gennady M. Mikhailov (Institute of Microelectronics Technology and High Purity Materials RAS, 142432 Chernogolovka, Russia)
Anatoliy V. Chernykh (Institute of Microelectronics Technology and High Purity Materials RAS, 142432 Chernogolovka, Russia)
Lev A. Fomin (Institute of Microelectronics Technology and High Purity Materials RAS, 142432 Chernogolovka, Russia)

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 11 weeks

 

Abstract | Full Text

Growing of epitaxial Fe50Mn50/Fe/Mo/R-sapphire films was performed with a new configuration of two in-plane easy axes of Fe(001)-layer magnetization in which application of annealing in a magnetic field forms an unidirectional anisotropy. The microstructures made from these films exhibited an exchange bias 25–35 G along an exchange field generated at antiferromagnet/ferromagnet (AFM/FM) interface. Magnetic force microscopy (MFM) experiments supported by micromagnetic calculations and magneto-resistive measurements allowed interpretation of the magnetic states of the Fe layer in these microstructures. The magnetic states of the iron layer are influenced more by crystallographic anisotropy of the Fe-layer than by unidirectional exchange anisotropy.