APL Materials (Nov 2014)

Electronic transitions in strained SmNiO3 thin films

  • S. Catalano,
  • M. Gibert,
  • V. Bisogni,
  • O. E. Peil,
  • F. He,
  • R. Sutarto,
  • M. Viret,
  • P. Zubko,
  • R. Scherwitzl,
  • A. Georges,
  • G. A. Sawatzky,
  • T. Schmitt,
  • J.-M. Triscone

DOI
https://doi.org/10.1063/1.4902138
Journal volume & issue
Vol. 2, no. 11
pp. 116110 – 116110-7

Abstract

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Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T = TNéel. Here, we investigate thin films of SmNiO3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (TNéel < TMI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where TNéel = TMI is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO3 lattice leads to the stabilization of a single metallic paramagnetic phase.