Investigation of carrier transport and collection characteristics for GaAs-based betavoltaic batteries
Renzhou Zheng,
Yu Wang,
Jingbin Lu,
Xiaoyi Li,
Ziyi Chen,
Xue Zhang,
Yuehui Zhang,
Yugang Zeng,
Lei Liang,
Li Qin,
Yongyi Chen,
Yumin Liu
Affiliations
Renzhou Zheng
College of Physics, Jilin University, Changchun 130012, China
Yu Wang
College of Physics, Jilin University, Changchun 130012, China
Jingbin Lu
College of Physics, Jilin University, Changchun 130012, China
Xiaoyi Li
College of Physics, Jilin University, Changchun 130012, China
Ziyi Chen
College of Physics, Jilin University, Changchun 130012, China
Xue Zhang
College of Physics, Jilin University, Changchun 130012, China
Yuehui Zhang
College of Physics, Jilin University, Changchun 130012, China
Yugang Zeng
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Lei Liang
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Li Qin
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Yongyi Chen
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Yumin Liu
College of Nuclear Science and Engineering, East China University of Technology, Nanchang 330013, China
This paper presents a simulation model to predict the performance of GaAs-based betavoltaic batteries with a p–n junction structure, in which the carrier transport and collection characteristics were studied. First, the electron–hole pair generation rate in the GaAs material under the irradiation of a 63Ni source was calculated using the Monte Carlo codes. Furthermore, by simulating the energy band structure, electric field distribution, and current density distribution in batteries with the finite element analysis software COMSOL Multiphysics, we analyzed the effects of structure parameters on the output performance. Our simulation results showed that the short-circuit current density (Jsc), open-circuit voltage (Voc), maximum output power density (Pm), and energy conversion efficiency (η) of the batteries are significantly affected by the thicknesses and doping concentrations of the p-region and n-region (Hp-GaAs, Hn-GaAs, Na, and Nd). The optimized GaAs-based battery with an Hp-GaAs value of 0.1 μm, an Hn-GaAs value of 9.9 μm, an Na value of 3.98 × 1016 cm−3, and an Nd value of 1 × 1015 cm−3 can achieve a Pm value of 0.080 μW/cm2. The related Jsc, Voc, and η values are 0.234 μA/cm2, 0.49 V, and 1.55%, respectively. When the top and bottom heavily doped layers are introduced, the Pm value of the battery is enhanced by 7.5% compared to that of the battery without heavily doped layers due to the formed drift fields.
