Solution-based electrical doping of organic photovoltaics with non-fullerene acceptors facilitated by solvent vapor pre-treatment
Yi-Chien Chang,
Felipe A. Larrain,
Canek Fuentes-Hernandez,
Youngrak Park,
Bernard Kippelen
Affiliations
Yi-Chien Chang
Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Felipe A. Larrain
Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Canek Fuentes-Hernandez
Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Youngrak Park
Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Bernard Kippelen
Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Solution-based electrical doping of organic semiconductors using 12-molybdophosphoric acid (PMA) hydrate has been shown to allow p-type doping of conjugated polymers over a limited depth from the surface, enabling the fabrication of organic solar cells with a simplified device architecture. However, the doping level of certain conjugated polymers using PMA was found to be limited by the polymer film volume. Here, we report a modified PMA doping technique based on film volume expansion that is applicable to device fabrication, leading to hole-collecting layer-free non-fullerene organic photovoltaic devices, which exhibit a comparable photovoltaic performance to those with a commonly evaporated MoO3 hole-collecting layer.
