Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
Yutaro Miyano,
Ryosuke Asafuji,
Shuhei Yagi,
Yasuto Hijikata,
Hiroyuki Yaguchi
Affiliations
Yutaro Miyano
Division of Mathematics Electronics and information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
Ryosuke Asafuji
Division of Mathematics Electronics and information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
Shuhei Yagi
Division of Mathematics Electronics and information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
Yasuto Hijikata
Division of Mathematics Electronics and information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
Hiroyuki Yaguchi
Division of Mathematics Electronics and information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched and increased with the oxidation time. Since these line-shaped faults were peculiar to the oxidation and stretched/increased with the oxide growth, they were identified as oxidation-induced stacking faults as seen in Si oxidation.
