Electronic Materials (Jul 2022)

Tunnel Spin-Polarization of Ferromagnetic Metals and Ferrimagnetic Oxides and Its Effect on Tunnel Magnetoresistance

  • Gunnar Suchaneck

DOI
https://doi.org/10.3390/electronicmat3030019
Journal volume & issue
Vol. 3, no. 3
pp. 227 – 234

Abstract

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This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the tunnel magnetoresistance and, for the very first time, its temperature coefficient are calculated based on the simplified Julliére model. The tunnel magnetoresistance in the magnetic tunnel junctions deteriorates due to the temperature dependence of the spin polarization the lower the Curie temperature is. As a result, magnetic tunnel junctions—consisting of ferromagnetic oxides with a Curie temperature not far above room temperature—are not promising for room temperature applications. Additionally, ferrimagnetic oxides possessing a Curie temperature below 650 K are not suitable for room temperature applications because of an unacceptable temperature coefficient exceeding −2%.

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