Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K

Kamyar Parto; Shaimaa I. Azzam; Kaustav Banerjee; Galan Moody

doi:10.1038/s41467-021-23709-5

Nature Communications (Jun 2021)

Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K

Kamyar Parto,
Shaimaa I. Azzam,
Kaustav Banerjee,
Galan Moody

Affiliations

Kamyar Parto: Department of Electrical and Computer Engineering, University of California
Shaimaa I. Azzam: Department of Electrical and Computer Engineering, University of California
Kaustav Banerjee: Department of Electrical and Computer Engineering, University of California
Galan Moody: Department of Electrical and Computer Engineering, University of California

DOI: https://doi.org/10.1038/s41467-021-23709-5
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 8

Abstract

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Quantum defects in 2D semiconductors are promising quantum light sources, but the required cryogenic temperatures limit their applicability. Here, the authors report a method to create single-photon emitters in monolayer WSe2 operating at temperatures up to 150 K without plasmonic or optical cavities.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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