Prospects for β-Ga2O3: now and into the future

Abstract

This review describes the progress of research on gallium oxide as a material for power devices, covering the development of bulk crystal growth through to epitaxial growth, defect evaluations, device processes, and development, all based on the author’s research experiences. During the last decade or so, the epi-wafer size has been expanded to 4–6 inches, and Schottky barrier diodes and field-effect transistors capable of ampere-class operations and with breakdown voltages of several kV have been demonstrated. On the other hand, challenges to the practical application of gallium oxide power devices, such as the cost of epi-wafers, killer defects, purity of epitaxial layer, etc., have also become apparent. This paper provides a comprehensive summary of the history of these developments, including not only papers but also patents and conference presentations, and gives my personal views on the prospects for this material’s continued development.

Keywords

• gallium oxide
• β-G2O3
• power device
• bulk crystal
• epitaxial growth