Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing
Xiao Sun,
Weiqing Cheng,
Yiming Sun,
Shengwei Ye,
Ali Al-Moathin,
Yongguang Huang,
Ruikang Zhang,
Song Liang,
Bocang Qiu,
Jichuan Xiong,
Xuefeng Liu,
John H. Marsh,
Lianping Hou
Affiliations
Xiao Sun
James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
Weiqing Cheng
James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
Yiming Sun
James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
Shengwei Ye
James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
Ali Al-Moathin
James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
Yongguang Huang
Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Haidian District, Beijing 100083, China
Ruikang Zhang
Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Haidian District, Beijing 100083, China
Song Liang
Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Haidian District, Beijing 100083, China
Bocang Qiu
Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi’an 712081, China
Jichuan Xiong
School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
Xuefeng Liu
School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
John H. Marsh
James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
Lianping Hou
James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz.
