Nanomaterials
(Mar 2020)
Novel Method for Electroless Etching of 6H–SiC
Gyula Károlyházy,
Dávid Beke,
Dóra Zalka,
Sándor Lenk,
Olga Krafcsik,
Katalin Kamarás,
Ádám Gali
Affiliations
Gyula Károlyházy
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary
Dávid Beke
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary
Dóra Zalka
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary
Sándor Lenk
Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
Olga Krafcsik
Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
Katalin Kamarás
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary
Ádám Gali
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary
DOI
https://doi.org/10.3390/nano10030538
Journal volume & issue
Vol. 10,
no. 3
p.
538
Abstract
Read online
In this article, we report an electroless method to fabricate porous hexagonal silicon carbide and hexagonal silicon carbide nanoparticles (NPs) as small as 1 nm using wet chemical stain etching. We observe quantum confinement effect for ultrasmall hexagonal SiC NPs in contrast to the cubic SiC NPs. We attribute this difference to the various surface terminations of the two polytypes of SiC NPs.
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