Graphene-Based Polarization-Independent Mid-Infrared Electro-Absorption Modulator Integrated in a Chalcogenide Glass Waveguide

Yong Zhou; Rongguo Lu; Guangbiao Wang; Jiangbo Lyu; Meng Tan; Liming Shen; Rui Lin; Zhonghua Yang; Yong Liu

doi:10.1186/s11671-021-03538-7

Nanoscale Research Letters (May 2021)

Graphene-Based Polarization-Independent Mid-Infrared Electro-Absorption Modulator Integrated in a Chalcogenide Glass Waveguide

Yong Zhou,
Rongguo Lu,
Guangbiao Wang,
Jiangbo Lyu,
Meng Tan,
Liming Shen,
Rui Lin,
Zhonghua Yang,
Yong Liu

Affiliations

Yong Zhou: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China
Rongguo Lu: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China
Guangbiao Wang: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China
Jiangbo Lyu: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China
Meng Tan: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China
Liming Shen: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China
Rui Lin: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China
Zhonghua Yang: Chongqing United Microelectronics Center
Yong Liu: School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China

DOI: https://doi.org/10.1186/s11671-021-03538-7
Journal volume & issue: Vol. 16, no. 1
pp. 1 – 7

Abstract

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Abstract A polarization-insensitive graphene-based mid-infrared optical modulator is presented that comprised SiO2/ Ge23Sb7S70, in which two graphene layers are embedded with a semiellipse layout to support transverse magnetic (TM) and transverse electric (TE) polarizing modes with identical absorption. The key performance index for the polarization independent modulator is polarization-sensitivity loss (PSL). The waveguide of our device just supports basic TE and TM modes, and the PSL between two modes is of < 0.24 dB. The model can offer extinction ratio (ER) more than 16 dB and insertion loss less than 1 dB. The operation spectrum ranges from 2 to 2.4 μm with optical bandwidth of 400 nm. The 3 dB modulation bandwidth is as high as 136 GHz based on theoretical calculation.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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